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TGF2160

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Shenzhen Chive Electronics Co., Ltd.

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TGF2160

Vgs - Gate-Source Breakdown Voltage : - 7 V

Technology : GaAs

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 10.4 dB

Transistor Type : pHEMT

Pd - Power Dissipation : 5.6 W

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 12 V

Packaging : Tray

Id - Continuous Drain Current : 517 mA

Manufacturer : Qorvo

Description : RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE

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The TGF2160,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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